THE DYNAMICS OF PHOTOEXCITED CARRIERS IN MICROCRYSTALLINE SILICON

[11] BORON DOPING OF HYDROGENATED SILICON THIN-FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L183 - L186

[12] FORMATION KINETICS AND CONTROL OF MICROCRYSTALLITE IN MU-C-SI-H FROM GLOW-DISCHARGE PLASMA [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 767 - 774

[13] STRUCTURAL STUDY ON AMORPHOUS-MICROCRYSTALLINE MIXED-PHASE SI-H FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) : L439 - L442

[14] MISHIMA Y, 1982, PHILOS MAG B, V46, P1, DOI 10.1080/01418618208236202

[15] REVERSIBLE PHOTOINDUCED MODIFICATION OF ELECTRON-CAPTURE CROSS-SECTION AT LOCALIZED STATES IN A-SI-H [J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 895 - 897

[16] THE HALL-EFFECT IN POLYCRYSTALLINE AND POWDERED SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1980, 43 (11) : 1263 - 1307

[17] OPTICAL-PROPERTIES AND TRANSPORT IN MICROCRYSTALLINE SILICON PREPARED AT TEMPERATURES BELOW 400-DEGREES-C [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7281 - 7286

[18] CRITICAL DENSITY IN PERCOLATION PROCESSES [J]. JOURNAL OF CHEMICAL PHYSICS, 1970, 53 (09) : 3759 - &

[19] SEE SM, 1981, PHYSICS SEMICONDUCTO, P850

[20] ELECTRONIC-PROPERTIES OF MICROCRYSTALLINE SILICON FILMS PREPARED IN A GLOW-DISCHARGE PLASMA [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 257 - 260

[11] BORON DOPING OF HYDROGENATED SILICON THIN-FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L183 - L186

[12] FORMATION KINETICS AND CONTROL OF MICROCRYSTALLITE IN MU-C-SI-H FROM GLOW-DISCHARGE PLASMA [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 767 - 774

[13] STRUCTURAL STUDY ON AMORPHOUS-MICROCRYSTALLINE MIXED-PHASE SI-H FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) : L439 - L442

[14] MISHIMA Y, 1982, PHILOS MAG B, V46, P1, DOI 10.1080/01418618208236202

[15] REVERSIBLE PHOTOINDUCED MODIFICATION OF ELECTRON-CAPTURE CROSS-SECTION AT LOCALIZED STATES IN A-SI-H [J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 895 - 897

[16] THE HALL-EFFECT IN POLYCRYSTALLINE AND POWDERED SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1980, 43 (11) : 1263 - 1307

[17] OPTICAL-PROPERTIES AND TRANSPORT IN MICROCRYSTALLINE SILICON PREPARED AT TEMPERATURES BELOW 400-DEGREES-C [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7281 - 7286

[18] CRITICAL DENSITY IN PERCOLATION PROCESSES [J]. JOURNAL OF CHEMICAL PHYSICS, 1970, 53 (09) : 3759 - &

[19] SEE SM, 1981, PHYSICS SEMICONDUCTO, P850

[20] ELECTRONIC-PROPERTIES OF MICROCRYSTALLINE SILICON FILMS PREPARED IN A GLOW-DISCHARGE PLASMA [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 257 - 260