LATERAL GROWTH OF COBALT SILICIDE OBSERVED BY AN MEV HELIUM ION MICROPROBE

被引：6

作者：

KINOMURA, A

TAKAI, M

NAMBA, S

RYSSEL, H

TSIEN, PH

BURTE, E

SATOU, M

CHAYAHARA, A

机构：

[1] OSAKA UNIV, EXTREME MAT RES CTR, TOYONAKA, OSAKA 560, JAPAN

[2] FRAUNHOFER ARBEITSGRP INTEGRIERTE SCHALTUNGEN, W-8520 ERLANGEN, GERMANY

[3] GOVT IND RES INST, IKEDA, OSAKA 563, JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 64卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(92)95575-C

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Lateral growth of cobalt silicide on silicon was investigated by a 1.5 MeV helium ion microprobe with Rutherford backscattering (RBS). Lateral and cross-sectional cobalt distributions in cobalt silicide patterns were directly observed by RBS-mapping and RBS-tomography methods. Comparison between arsenic-implanted (200 keV, 7 x 10(15) As+/cm2) and unimplanted patterns revealed that ion beam mixing by arsenic implantation suppressed the lateral growth of cobalt silicide during rapid thermal annealing at 1000-degrees-C for 1 s.

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页码：770 / 773

页数：4

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