RECENT PROGRESS IN REFRACTORY-METAL SILICIDE FORMATION BY ION-BEAM MIXING AND ITS APPLICATIONS TO VLSI

被引:14
作者
OKABAYASHI, H
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10.1016/0168-583X(89)90781-7
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
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页码:246 / 252
页数:7
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