CHARACTERIZATION OF SILICON OXYNITRIDE FILMS PREPARED BY THE SIMULTANEOUS IMPLANTATION OF OXYGEN AND NITROGEN-IONS INTO SILICON

被引：6

作者：

HEZEL, R

STREB, W

机构：

来源：

THIN SOLID FILMS | 1985年 / 124卷 / 01期

关键词：

D O I：

10.1016/0040-6090(85)90025-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：35 / 41

页数：7

共 12 条

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HEZEL, R ;

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[8] AUGER-ELECTRON SPECTROSCOPY AND ELECTRON-ENERGY LOSS SPECTROSCOPY STUDIES OF THE FORMATION OF SILICON-NITRIDE BY IMPLANTING LOW-ENERGY NITROGEN-IONS INTO SILICON [J].

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THIN SOLID FILMS, 1981, 85 (01) :7-14

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