DEFECT CHARACTERIZATION IN MONOCRYSTALLINE SILICON GROWN OVER SIO2

[1] SHEAR STRAIN AT CORNERS AND EDGES OF EPITAXIAL SILICON ON SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) : 652 - 657

[2] EDINGTON JW, 1976, PRACTICAL ELECTRON M, P145

[3] Fan J. C. C., 1980, International Electron Devices Meeting. Technical Digest

[4] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 365 - 367

[5] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 71 - 74

[6] SILICON GRAPHOEPITAXY USING A STRIP-HEATER OVEN [J]. APPLIED PHYSICS LETTERS, 1980, 37 (05) : 454 - 456

[7] GRAPHO-EPITAXY OF SILICON ON FUSED-SILICA USING SURFACE MICROPATTERNS AND LASER CRYSTALLIZATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1640 - 1643

[8] HIRSCH PB, 1965, ELECT MICROSCOPY THI, P234

[9] GROWTH-PROCESS OF SILICON OVER SIO2 BY CVD - EPITAXIAL LATERAL OVERGROWTH TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) : 1571 - 1580

[10] JASTRZEBSKI L, 1982, ELECTROCHEMICAL SOC, V82, P242

[1] SHEAR STRAIN AT CORNERS AND EDGES OF EPITAXIAL SILICON ON SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) : 652 - 657

[2] EDINGTON JW, 1976, PRACTICAL ELECTRON M, P145

[3] Fan J. C. C., 1980, International Electron Devices Meeting. Technical Digest

[4] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 365 - 367

[5] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 71 - 74

[6] SILICON GRAPHOEPITAXY USING A STRIP-HEATER OVEN [J]. APPLIED PHYSICS LETTERS, 1980, 37 (05) : 454 - 456

[7] GRAPHO-EPITAXY OF SILICON ON FUSED-SILICA USING SURFACE MICROPATTERNS AND LASER CRYSTALLIZATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1640 - 1643

[8] HIRSCH PB, 1965, ELECT MICROSCOPY THI, P234

[9] GROWTH-PROCESS OF SILICON OVER SIO2 BY CVD - EPITAXIAL LATERAL OVERGROWTH TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) : 1571 - 1580

[10] JASTRZEBSKI L, 1982, ELECTROCHEMICAL SOC, V82, P242