EFFECT OF RAPID THERMAL ANNEALING ON THE BARRIER HEIGHT OF METAL GAAS WITH SELENIUM INTERFACIAL LAYER

被引：6

作者：

EFTEKHARI, G

机构：

[1] Electrical Engineering Department, State University of New York, College at New Paltz

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 139卷 / 01期

关键词：

D O I：

10.1002/pssa.2211390143

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K77 / K79

页数：3

共 11 条

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