FORMATION OF A ME GAAS HETEROCONTACT WITH AN INTERMEDIATE LAYER OF GALLIUM SELENIDE

被引：11

作者：

SYSOEV, BI ^{[1
]}

STRYGIN, VD ^{[1
]}

KOTOV, GI ^{[1
]}

NEVRUEVA, EN ^{[1
]}

DOMASHEVSKAYA, AP ^{[1
]}

机构：

[1] VORONEZH STATE UNIV,DEPT SOLID STATE PHYS,VORONEZH,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1992年 / 129卷 / 01期

关键词：

D O I：

10.1002/pssa.2211290119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A comparative analysis of different GaAs surface treatment effects onto the Schottky barrier height in Al/n-GaAs (100) structures by electrical measurements of current-voltage (I-U) and capacitance-voltage (C-U) characteristics is presented. Treatment in selenium vapour leads to a decrease of the electron density of states (EDS). The effect of technological conditions (temperature, process duration) of GaAs treatment in selenium vapour onto phi(bn) and the composition of GaAs surface which was controlled by Auger electron spectroscopy method (AES) is investigated. The obtained data allowed to conclude that the changes in phi(bn) are determined by the deviation of the composition from the stoichiometric one at the GaAs interface.

引用

页码：207 / 212

页数：6

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