CHROMIUM AND IRON IMPURITIES IN LIQUID ENCAPSULATED CZOCHRALSKI GALLIUM-ARSENIDE

被引：7

作者：

CLEGG, JB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 08期

关键词：

D O I：

10.1063/1.331390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5972 / 5974

页数：3

共 11 条

[1]

Clegg J. B., 1980, Surface and Interface Analysis, V2, P91, DOI 10.1002/sia.740020304

[2] EVALUATION OF SECONDARY ION MASS-SPECTROMETRY PROFILE DISTORTIONS USING RUTHERFORD BACKSCATTERING [J].

CLEGG, JB ;

OCONNOR, DJ .

APPLIED PHYSICS LETTERS, 1981, 39 (12) :997-999

[3]

FRENZEL H, COMMUNICATION

[4]

HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

[5]

HUBER AM, 1981, I PHYS C SER, V56, P579

[6] OXYGEN-RELATED GETTERING OF SILICON DURING GROWTH OF BULK GAAS BRIDGMAN CRYSTALS [J].

MARTIN, GM ;

JACOB, G ;

HALLAIS, JP ;

GRAINGER, F ;

ROBERTS, JA ;

CLEGG, B ;

BLOOD, P ;

POIBLAUD, G .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (09) :1841-1856

[7] PREDICTION OF SECONDARY ION CURRENTS FOR TRACE-ELEMENTS IN GALLIUM-ARSENIDE IN SECONDARY ION MASS-SPECTROMETRY [J].

MORGAN, AE ;

CLEGG, JB .

SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 1980, 35 (05) :281-285

[8] UNDOPED SEMI-INSULATING LEC GAAS - A MODEL AND A MECHANISM [J].

OLIVER, JR ;

FAIRMAN, RD ;

CHEN, RT ;

YU, PW .

ELECTRONICS LETTERS, 1981, 17 (22) :839-841

[9]

RUMSBY DH, 1981, UNPUB SEP P C GAAS R

[10] GROWTH AND CHARACTERIZATION OF LARGE DIAMETER UNDOPED SEMI-INSULATING GAAS FOR DIRECT ION-IMPLANTED FET TECHNOLOGY [J].

THOMAS, RN ;

HOBGOOD, HM ;

ELDRIDGE, GW ;

BARRETT, DL ;

BRAGGINS, TT .

SOLID-STATE ELECTRONICS, 1981, 24 (05) :387-&

← 1 2 →