CHARACTERIZATION OF RAPIDLY ANNEALED MO-POLYCIDE

被引：7

作者：

HO, VQ

NAGUIB, HM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573342

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：896 / 898

页数：3

共 11 条

[1]

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[2]

FULKS RT, 1982, IEEE ELECTRON DEVICE, V3

[3] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J].

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HSIEH, N ;

ISHAQ, MH ;

KOBURGER, CW ;

WHITE, FR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1417-1424

[4] COMPOSITE TASI2/N + POLY-SI FORMATION BY RAPID THERMAL ANNEALING [J].

KWONG, DL ;

KWOR, R ;

TSAUR, BY .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) :133-135

[5]

MCPHERSON J, 1983, JUN EL MAT C BURL

[6] FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFET [J].

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[7] PROPERTIES OF MO-SILICIDES IN SI-GATE TECHNOLOGY [J].

NEPPL, F ;

MENZEL, G ;

SCHWABE, U .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) :1174-1178

[8] COMPARISON OF THE PROPERTIES OF MOLYBDENUM SILICIDE FILMS DEPOSITED BY DC MAGNETRON AND RF DIODE CO-DEPOSITION [J].

NOWICKI, RS ;

MOULDER, JF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :562-567

[9] FORMATION OF TITANIUM SILICIDE FILMS BY RAPID THERMAL-PROCESSING [J].

POWELL, RA ;

CHOW, R ;

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PAN, JDT .

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[10]

SEDGWICK TO, 1983, NOV MAT RES SOC M BO

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