IONIZATION TRANSIENTS OF SHALLOW LEVELS IN SILICON SPACE-CHARGE LAYER AT LOW-TEMPERATURE

被引：10

作者：

ROSENCHER, E

MOSSER, V

VINCENT, G

机构：

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 45卷 / 07期

关键词：

D O I：

10.1016/0038-1098(83)90442-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：629 / 632

页数：4

共 10 条

[1] IONIZATION OF LOW DONOR LEVELS AND RECOMBINATION OF HOT-ELECTRONS IN N-SI AT LOW-TEMPERATURES [J].

ASCHE, M ;

KOSTIAL, H ;

SARBEY, OG .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 91 (02) :521-530

[2] LOW-TEMPERATURE RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM AND SILICON [J].

BROWN, RA ;

RODRIGUEZ, S .

PHYSICAL REVIEW, 1967, 153 (03) :890-+

[3]

FRENKEL J, 1938, PHYS REV, V54, P657

[4] 3-DIMENSIONAL POOLE-FRENKEL EFFECT [J].

HARTKE, JL .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4871-&

[5]

KIREEV P, PHYSIQUE SEMICONDUCT

[6] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

[7]

ROSENCHER E, UNPUB

[8] TIME-DEPENDENCE OF DEPLETION REGION FORMATION IN PHOSPHORUS-DOPED SILICON MOS DEVICES AT CRYOGENIC TEMPERATURES [J].

SAKS, NS ;

NORDBRYHN, A .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :6962-6968

[9] TRANSIENT-RESPONSE OF N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS DURING TURNON AT 10-25-DEGREES-K [J].

TEWKSBURY, SK .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3865-3872

[10] ELECTRIC-FIELD EFFECT ON THE THERMAL EMISSION OF TRAPS IN SEMICONDUCTOR JUNCTIONS [J].

VINCENT, G ;

CHANTRE, A ;

BOIS, D .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5484-5487

← 1 →