MICROSTRUCTURAL INVESTIGATIONS OF REFRACTORY-METAL SILICIDE FILMS ON SILICON

被引：16

作者：

MAGEE, TJ ^{[1
]}

WOOLHOUSE, GR ^{[1
]}

KAWAYOSHI, HA ^{[1
]}

NIEMEYER, IC ^{[1
]}

RODRIGUES, B ^{[1
]}

ORMOND, RD ^{[1
]}

机构：

[1] NATL SEMICOND CORP,SANTA CLARA,CA 95051

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 04期

关键词：

D O I：

10.1116/1.582874

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：756 / 761

页数：6

共 9 条

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[2] STOICHIOMETRIC SHIFTS IN COSPUTTERED REFRACTORY SILICIDE FILMS DURING SUBSEQUENT HEAT-TREATMENT
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 766 - 770
[3] PROPERTIES OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) : 952 - 956
[4] DHEURLE FM, 1982, VLSI SCI TECHNOLOGY
[5] HEXAGONAL WSI2 IN CO-SPUTTERED (TUNGSTEN AND SILICON) MIXTURE
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7450 - 7452
[6] MURARKA SP, 1983, SILICIDES VLSI APPLI
[7] STIMMELL JB, 1984, UNPUB THIN SOLID FIL
[8] PROPERTIES OF TUNGSTEN SILICIDE FILM ON POLYCRYSTALLINE SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5350 - 5355
[9] 1977, POWDER DIFFRACTION F