THIN OXIDE-FILMS OF SILICON BY HIGH-PRESSURE OXIDATION

被引：3

作者：

HIRAYAMA, M ^{[1
]}

MIYOSHI, H ^{[1
]}

TSUBOUCHI, N ^{[1
]}

ABE, H ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,LSI R&D LAB,ITAMI,HYOGO 664,JAPAN

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1982年 / 11卷 / 05期

关键词：

D O I：

10.1007/BF02658906

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：919 / 929

页数：11

共 13 条

[1]

GUERENA JA, 1980, IEEE T ELECTRON DEVI, V27, P1397

[2] HIGH-PRESSURE OXIDATION FOR THIN GATE INSULATOR PROCESS [J].

HIRAYAMA, M ;

MIYOSHI, H ;

TSUBOUCHI, N ;

ABE, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :503-507

[3] RESIDUAL-STRESS, CHEMICAL ETCH RATE, REFRACTIVE-INDEX, AND DENSITY-MEASUREMENTS ON SIO2-FILMS PREPARED USING HIGH-PRESSURE OXYGEN [J].

IRENE, EA ;

DONG, DW ;

ZETO, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :396-399

[4] DEFECT FORMATION DURING HIGH-PRESSURE, LOW-TEMPERATURE STEAM OXIDATION OF SILICON [J].

KATZ, LE ;

KIMERLING, LC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) :1680-1683

[5]

KAWAZU S, 1981, SPR EL SOC M

[6]

LINGENZA JR, 1961, J PHYS CHEM, V65, P2011

[7] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .2. INFLUENCE OF PROCESSING AND MATERIALS [J].

OSBURN, CM ;

ORMOND, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) :597-+

[8] KINETICS OF HIGH-PRESSURE OXIDATION OF SILICON IN PYROGENIC STEAM [J].

RAZOUK, RR ;

LIE, LN ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (10) :2214-2220

[9] INTERPRETATION OF SURFACE AND BULK EFFECTS USING PULSED MIS CAPACITOR [J].

SCHRODER, DK ;

GULDBERG, J .

SOLID-STATE ELECTRONICS, 1971, 14 (12) :1285-+

[10]

SLATER JC, 1933, THEORETICAL PHYSICS

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