SOLID COMPOSITION AND GROWTH-RATE OF GA1-XALXAS GROWN EPITAXIALLY BY MOCVD

被引:18
作者
TAKAHASHI, Y [1 ]
SOGA, T [1 ]
SAKAI, S [1 ]
UMENO, M [1 ]
HATTORI, S [1 ]
机构
[1] NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 09期
关键词
D O I
10.1143/JJAP.22.1357
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:1357 / 1360
页数:4
相关论文
共 11 条
[1]   CHARACTERIZATION OF ORGANO-METALLIC VPE GROWN GAAS AND AIGAAS FOR SOLAR-CELL APPLICATIONS [J].
AEBI, V ;
COOPER, CB ;
MOON, RL ;
SAXENA, RR .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) :517-525
[2]  
CASEY HC, 1978, HETEROSTRUCTURE LA B, P16
[3]  
DUPIUS RD, 1977, APPL PHYS LETT, V31, P201
[4]  
DUPIUS RD, 1977, APPL PHYS LETT, V31, P466
[5]   A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR [J].
EVERSTEYN, FC ;
SEVERIN, PJW ;
BREKEL, CHJV ;
PEEK, HL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :925-+
[6]   PROPERTIES OF EPITAXIAL GALLIUM-ARSENIDE FROM TRIMETHYLGALLIUM AND ARSINE [J].
ITO, S ;
SHINOHARA, T ;
SEKI, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) :1419-1423
[7]   GAAS-MESFET PREPARED BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].
MORKOC, H ;
ANDREWS, J ;
AEBI, V .
ELECTRONICS LETTERS, 1979, 15 (04) :105-106
[8]   PROPERTIES OF EPITAXIAL GAAS LAYERS FROM A TRIETHYL GALLIUM AND ARSINE SYSTEM [J].
SEKI, Y ;
TANNO, K ;
IIDA, K ;
ICHIKI, E .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) :1108-1112
[10]   ORGANOMETALLIC VPE GROWTH OF A1XGA1-XAS [J].
STRINGFELLOW, GB ;
HALL, HT .
JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) :201-226