HIGH-FIELD TUNNELING CALCULATIONS IN METAL-OXIDE-SILICON CAPACITORS INCORPORATING THE PERIMETER EFFECT

被引：7

作者：

HOOK, TB ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV, DEPT ELECT ENGN, NEW HAVEN, CT 06520 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 11期

关键词：

D O I：

10.1063/1.336730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3881 / 3889

页数：9

共 23 条

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