DEEP IMPURITY LEVELS IN SEMICONDUCTOR SUPERLATTICES

被引:47
作者
REN, SY [1 ]
DOW, JD [1 ]
SHEN, J [1 ]
机构
[1] UNIV NOTRE DAME, DEPT PHYS, NOTRE DAME, IN 46556 USA
关键词
D O I
10.1103/PhysRevB.38.10677
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:10677 / 10692
页数:16
相关论文
共 75 条
[41]   TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].
LANG, DV ;
LOGAN, RA ;
JAROS, M .
PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030
[42]   LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].
LANG, DV ;
LOGAN, RA .
PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639
[43]   STUDY OF NEUTRAL VACANCY IN SEMI-CONDUCTORS [J].
LANNOO, M ;
LENGLART, P .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (10) :2409-&
[44]  
LANNOO M, COMMUNICATION
[45]   LATTICE-RELAXATION OF PRESSURE-INDUCED DEEP CENTERS IN GAAS-SI [J].
LI, MF ;
YU, PY ;
WEBER, ER ;
HANSEN, W .
APPLIED PHYSICS LETTERS, 1987, 51 (05) :349-351
[46]  
LI MF, 1987, SOLID STATE COMMUN, V61, P13
[47]   LOCALIZED VACANCY STATE IN GE [J].
LINDEFELT, U .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (11) :L419-L423
[48]  
MADELUNG O, 1982, LANDOLTBORNSTEIN N A, V17
[49]  
MALLOY KJ, 1984, THESIS STANFORD U
[50]   INVESTIGATION OF THE DX CENTER IN HEAVILY DOPED N-TYPE GAAS [J].
MAUDE, DK ;
PORTAL, JC ;
DMOWSKI, L ;
FOSTER, T ;
EAVES, L ;
NATHAN, M ;
HEIBLUM, M ;
HARRIS, JJ ;
BEALL, RB .
PHYSICAL REVIEW LETTERS, 1987, 59 (07) :815-818