COMPUTER-SIMULATION OF DOSE EFFECTS ON COMPOSITION PROFILES UNDER ION-IMPLANTATION

被引：38

作者：

MIYAGAWA, Y

IKEYAMA, M

SAITO, K

MASSOURAS, G

MIYAGAWA, S

机构：

[1] Government Industrial Research Institute, Kita-ku, Nagoya 462, Nagoya

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 12期

关键词：

D O I：

10.1063/1.349776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Here is presented a computer code "dynamic SASAMAL," which has been developed to simulate the dose dependence of concentration profiles and sputtering yields under ion implantations. The model calculations have been applied for high dose implantations of 50-keV nitrogen into zirconium and aluminum. The results are compared with composition profiles obtained by Rutherford backscattering spectrometry (RBS) and with semiempirical values. In the case of Zr, agreements between calculated composition profiles and experimental profiles obtained by RBS analysis were excellent for all fluences up to 10(18) ions/cm2 and the calculated sputtering yield decreased toward the semiempirical value with the increase of the fluence. In the case of Al, for fluences up to 7.5 x 10(17) ions/cm2, the composition profiles obtained by RBS measurements agreed well with the calculated results, but for a fluence of 1 x 10(18) ions/cm2, the measured profile deviated from the calculated one; while the calculations assume a saturation concentration equal to the saturated nitride phase, nitrogen concentrations of 55% were measured within the mean ion range.

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收藏

页码：7289 / 7294

页数：6

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