ARGUMENTS FOR ELECTRON CONDUCTION IN SILICON-NITRIDE

被引：19

作者：

YAU, LD

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 08期

关键词：

D O I：

10.1109/EDL.1984.25930

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：318 / 321

页数：4

共 12 条

[1]

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[4]

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[6] TRANSPORT PROCESSES OF ELECTRONS IN MNOS STRUCTURES [J].

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JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7001-7006

[7] CARRIER CONDUCTION AND TRAPPING IN METAL-NITRIDE-OXIDE-SEMICONDUCTOR STRUCTURES [J].

SUZUKI, E ;

HAYASHI, Y .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8880-8885

[8] CURRENT TRANSPORT AND MAXIMUM DIELECTRIC STRENGTH OF SILICON NITRIDE FILMS [J].

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JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2951-+

[9] ELECTRIC CONDUCTION IN NITROGEN-RICH SILICON-NITRIDE FILMS PRODUCED BY SIH2CL2 AND NH3 [J].

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JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :568-575

[10] HOLE CONDUCTION IN SI3N4 FILMS ON SI [J].

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