ELECTRIC CONDUCTION IN NITROGEN-RICH SILICON-NITRIDE FILMS PRODUCED BY SIH2CL2 AND NH3

被引:17
作者
WATANABE, K [1 ]
WAKAYAMA, S [1 ]
机构
[1] SONY RES CTR,HODOGAYA,YOKOHAMA,JAPAN
关键词
D O I
10.1063/1.329920
中图分类号
O59 [应用物理学];
学科分类号
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页码:568 / 575
页数:8
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[1]   HOLE INJECTION INTO SILICON-NITRIDE - DARK CURRENT DEPENDENCE ON ELECTRODE MATERIALS AND INSULATOR THICKNESS [J].
ARNETT, PC ;
DIMARIA, DJ .
APPLIED PHYSICS LETTERS, 1975, 27 (01) :34-36
[2]   SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J].
ARNETT, PC ;
YUN, BH .
APPLIED PHYSICS LETTERS, 1975, 26 (03) :94-96
[3]   TRANSIENT CONDUCTION IN INSULATORS AT HIGH FIELDS [J].
ARNETT, PC .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5236-5243
[4]   SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J].
BEAN, KE ;
GLEIM, PS ;
YEAKLEY, RL ;
RUNYAN, WR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :733-&
[5]   PROPERTIES OF AMMONIA-FREE NITROGEN-SI3N4 FILMS PRODUCED AT LOW-TEMPERATURES [J].
GERETH, R ;
SCHERBER, W .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (09) :1248-&
[6]   2-BAND CONDUCTION OF AMORPHOUS SILICON-NITRIDE [J].
GINOVKER, AS ;
GRITSENKO, VA ;
SINITSA, SP .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02) :489-495
[7]   PHOTOEMISSION OF ELECTRONS AND HOLES INTO SILICON NITRIDE [J].
GOODMAN, AM .
APPLIED PHYSICS LETTERS, 1968, 13 (08) :275-&
[8]   EVALUATION OF SILICON NITRIDE LAYERS OF VARIOUS COMPOSITION BY BACKSCATTERING AND CHANNELING-EFFECT MEASUREMENTS [J].
GYULAI, J ;
MEYER, O ;
MAYER, JW ;
RODRIGUEZ, V .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) :451-+
[9]   INFLUENCE OF DEVICE PARAMETERS ON MEMORY PERFORMANCE OF MNOS STRUCTURE [J].
KOBAYASHI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (04) :555-+