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AGING CHARACTERISTICS OF 1.65-MU-M INGAAS/INP BURIED HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM AND LIQUID-PHASE EPITAXY
被引:2
作者
:
ASAHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,BUR RES & DEV,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,BUR RES & DEV,MUSASHINO,TOKYO 180,JAPAN
ASAHI, H
[
1
]
FUKUDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,BUR RES & DEV,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,BUR RES & DEV,MUSASHINO,TOKYO 180,JAPAN
FUKUDA, M
[
1
]
KAWAMURA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,BUR RES & DEV,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,BUR RES & DEV,MUSASHINO,TOKYO 180,JAPAN
KAWAMURA, Y
[
1
]
NOGUCHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,BUR RES & DEV,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,BUR RES & DEV,MUSASHINO,TOKYO 180,JAPAN
NOGUCHI, Y
[
1
]
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,BUR RES & DEV,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,BUR RES & DEV,MUSASHINO,TOKYO 180,JAPAN
NAGAI, H
[
1
]
TAKAHEI, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,BUR RES & DEV,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,BUR RES & DEV,MUSASHINO,TOKYO 180,JAPAN
TAKAHEI, K
[
1
]
机构
:
[1]
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,BUR RES & DEV,MUSASHINO,TOKYO 180,JAPAN
来源
:
JOURNAL OF APPLIED PHYSICS
|
1984年
/ 55卷
/ 03期
关键词
:
D O I
:
10.1063/1.333110
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:656 / 659
页数:4
相关论文
共 10 条
[1]
NEAR ROOM-TEMPERATURE CW OPERATION AT 1.70 MU-M OF MBE GROWN INGAAS-INP DH LASERS
ASAHI, H
论文数:
0
引用数:
0
h-index:
0
ASAHI, H
KAWAMURA, Y
论文数:
0
引用数:
0
h-index:
0
KAWAMURA, Y
IKEDA, M
论文数:
0
引用数:
0
h-index:
0
IKEDA, M
OKAMOTO, H
论文数:
0
引用数:
0
h-index:
0
OKAMOTO, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(03)
: L187
-
L190
[2]
ASAHI H, 1982, 8TH IEEE INT SEM LAS, P92
[3]
ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
CALAWA, AR
论文数:
0
引用数:
0
h-index:
0
CALAWA, AR
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(09)
: 701
-
703
[4]
A PH3 CRACKING FURNACE FOR MOLECULAR-BEAM EPITAXY
CHOW, R
论文数:
0
引用数:
0
h-index:
0
CHOW, R
CHAI, YG
论文数:
0
引用数:
0
h-index:
0
CHAI, YG
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1983,
1
(01):
: 49
-
54
[5]
ELECTRICAL AND OPTICAL-PROPERTIES OF BE-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY
KAWAMURA, Y
论文数:
0
引用数:
0
h-index:
0
KAWAMURA, Y
ASAHI, H
论文数:
0
引用数:
0
h-index:
0
ASAHI, H
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
NAGAI, H
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(02)
: 841
-
846
[6]
MBE-GROWN INGAAS/INP BH LASERS WITH LPE BURYING LAYERS
KAWAMURA, Y
论文数:
0
引用数:
0
h-index:
0
KAWAMURA, Y
NOGUCHI, Y
论文数:
0
引用数:
0
h-index:
0
NOGUCHI, Y
ASAHI, H
论文数:
0
引用数:
0
h-index:
0
ASAHI, H
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
NAGAI, H
[J].
ELECTRONICS LETTERS,
1982,
18
(02)
: 91
-
92
[7]
LOW THRESHOLD CURRENT CW OPERATION OF INP-GAINAS BURIED HETEROSTRUCTURE LASERS
NOGUCHI, Y
论文数:
0
引用数:
0
h-index:
0
NOGUCHI, Y
TAKAHEI, K
论文数:
0
引用数:
0
h-index:
0
TAKAHEI, K
SUZUKI, Y
论文数:
0
引用数:
0
h-index:
0
SUZUKI, Y
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
NAGAI, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(12)
: L759
-
L762
[8]
MOLECULAR-BEAM EPITAXY OF GAAS AND INP WITH GAS SOURCES FOR ARSINE AND P
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
PANISH, MB
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(12)
: 2729
-
2733
[9]
RAZEGHI M, COMMUNICATION
[10]
1.5-1.6-MU-M GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
ALAVI, K
论文数:
0
引用数:
0
h-index:
0
ALAVI, K
WAGNER, WR
论文数:
0
引用数:
0
h-index:
0
WAGNER, WR
PEARSALL, TP
论文数:
0
引用数:
0
h-index:
0
PEARSALL, TP
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
[J].
APPLIED PHYSICS LETTERS,
1983,
42
(10)
: 845
-
847
←
1
→
共 10 条
[1]
NEAR ROOM-TEMPERATURE CW OPERATION AT 1.70 MU-M OF MBE GROWN INGAAS-INP DH LASERS
ASAHI, H
论文数:
0
引用数:
0
h-index:
0
ASAHI, H
KAWAMURA, Y
论文数:
0
引用数:
0
h-index:
0
KAWAMURA, Y
IKEDA, M
论文数:
0
引用数:
0
h-index:
0
IKEDA, M
OKAMOTO, H
论文数:
0
引用数:
0
h-index:
0
OKAMOTO, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(03)
: L187
-
L190
[2]
ASAHI H, 1982, 8TH IEEE INT SEM LAS, P92
[3]
ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
CALAWA, AR
论文数:
0
引用数:
0
h-index:
0
CALAWA, AR
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(09)
: 701
-
703
[4]
A PH3 CRACKING FURNACE FOR MOLECULAR-BEAM EPITAXY
CHOW, R
论文数:
0
引用数:
0
h-index:
0
CHOW, R
CHAI, YG
论文数:
0
引用数:
0
h-index:
0
CHAI, YG
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1983,
1
(01):
: 49
-
54
[5]
ELECTRICAL AND OPTICAL-PROPERTIES OF BE-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY
KAWAMURA, Y
论文数:
0
引用数:
0
h-index:
0
KAWAMURA, Y
ASAHI, H
论文数:
0
引用数:
0
h-index:
0
ASAHI, H
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
NAGAI, H
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(02)
: 841
-
846
[6]
MBE-GROWN INGAAS/INP BH LASERS WITH LPE BURYING LAYERS
KAWAMURA, Y
论文数:
0
引用数:
0
h-index:
0
KAWAMURA, Y
NOGUCHI, Y
论文数:
0
引用数:
0
h-index:
0
NOGUCHI, Y
ASAHI, H
论文数:
0
引用数:
0
h-index:
0
ASAHI, H
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
NAGAI, H
[J].
ELECTRONICS LETTERS,
1982,
18
(02)
: 91
-
92
[7]
LOW THRESHOLD CURRENT CW OPERATION OF INP-GAINAS BURIED HETEROSTRUCTURE LASERS
NOGUCHI, Y
论文数:
0
引用数:
0
h-index:
0
NOGUCHI, Y
TAKAHEI, K
论文数:
0
引用数:
0
h-index:
0
TAKAHEI, K
SUZUKI, Y
论文数:
0
引用数:
0
h-index:
0
SUZUKI, Y
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
NAGAI, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(12)
: L759
-
L762
[8]
MOLECULAR-BEAM EPITAXY OF GAAS AND INP WITH GAS SOURCES FOR ARSINE AND P
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
PANISH, MB
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(12)
: 2729
-
2733
[9]
RAZEGHI M, COMMUNICATION
[10]
1.5-1.6-MU-M GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
ALAVI, K
论文数:
0
引用数:
0
h-index:
0
ALAVI, K
WAGNER, WR
论文数:
0
引用数:
0
h-index:
0
WAGNER, WR
PEARSALL, TP
论文数:
0
引用数:
0
h-index:
0
PEARSALL, TP
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
[J].
APPLIED PHYSICS LETTERS,
1983,
42
(10)
: 845
-
847
←
1
→