EFFECTS OF MG ADDITIONS ON ELECTROMIGRATION BEHAVIOR OF AL THIN-FILM CONDUCTORS

被引：18

作者：

DHEURLE, FM ^{[1
]}

GANGULEE, A ^{[1
]}

ALIOTTA, CF ^{[1
]}

RANIERI, VA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1975年 / 4卷 / 03期

关键词：

D O I：

10.1007/BF02666232

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：497 / 515

页数：19

相关论文

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