CHARACTERIZATION OF WNX METALLIZATION PREPARED BY ION-IMPLANTATION OF NITROGEN

被引：1

作者：

GREGUSOVA, D

LALINSKY, T

MOZOLOVA, Z

MACHAJDIK, D

POCHABA, I

VAVRA, I

PORGES, M

机构：

[1] Institute of Electrical Engineering, Slovak Academy of Sciences, 842 39 Bratislava

来源：

THIN SOLID FILMS | 1994年 / 249卷 / 02期

关键词：

D O I：

10.1016/0040-6090(94)90771-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermal stability of the sheet resistance of WNx metallization film prepared by ion implantation of nitrogen into sputtered tungsten film was investigated in correlation with microstructural changes examined by X-ray and transmission electron microscopy. The effect of microstructural properties on the sheet resistivity of the metallization film was demonstrated.

引用

收藏

页码：250 / 253

页数：4

相关论文

共 7 条

[1] SPUTTERED W-N DIFFUSION-BARRIERS [J].

KATTELUS, HP ;

KOLAWA, E ;

AFFOLTER, K ;

NICOLET, MA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2246-2254

[2] PROPERTIES OF WNX GAAS SCHOTTKY CONTACTS PREPARED BY ION-IMPLANTATION OF NITROGEN [J].

LALINSKY, T ;

KUZMIK, J ;

GREGUSOVA, D ;

MOZOLOVA, Z ;

BREZA, J ;

FECISKO, M ;

SEIDL, P .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1992, 3 (03) :157-161

[3] WNX SCHOTTKY DIODES ON PLASMA TREATED GAAS [J].

PACCAGNELLA, A ;

CALLEGARI, A ;

CARNERA, A ;

GASSER, M ;

LATTA, E ;

MURAKAMI, M ;

NORCOTT, M .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2356-2364

[4] WNX - PROPERTIES AND APPLICATIONS [J].

SO, FCT ;

KOLAWA, E ;

ZHAO, XA ;

NICOLET, MA .

THIN SOLID FILMS, 1987, 153 :507-520

[5] CHARACTERIZATION OF REFRACTORY W, WNX, AND WSIX FILMS ON GAAS USING THERMOREFLECTANCE MEASUREMENTS [J].

UCHITOMI, N ;

NAGAOKA, M ;

TOYODA, N .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) :1743-1746

[6] CHARACTERIZATION OF REACTIVELY SPUTTERED WNX FILM AS A GATE METAL FOR SELF-ALIGNMENT GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

UCHITOMI, N ;

NAGAOKA, M ;

SHIMADA, K ;

MIZOGUCHI, T ;

TOYODA, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06) :1392-1397

[7] HIGH-TEMPERATURE ANNEALING CHARACTERISTICS OF TUNGSTEN AND TUNGSTEN NITRIDE SCHOTTKY CONTACTS TO GAAS UNDER DIFFERENT ANNEALING CONDITIONS [J].

YU, KM ;

JAKLEVIC, JM ;

HALLER, EE ;

CHEUNG, SK ;

KWOK, SP .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) :1284-1291