A 2-LAYER MAGNETO-TLM CONTACT RESISTANCE MODEL - APPLICATION TO MODULATION-DOPED FET STRUCTURES

被引：17

作者：

LOOK, DC ^{[1
]}

机构：

[1] USAF, AVION LAB, WRIGHT PATTERSON AFB, OH 45433 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 02期

关键词：

D O I：

10.1109/16.2431

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：133 / 138

页数：6

共 11 条

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J].

BERGER, HH .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&

[2] CONTACT AND METALLIZATION PROBLEMS IN GAAS INTEGRATED-CIRCUITS [J].

BRASLAU, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06) :3085-3090

[3]

CHURCHILL RV, 1958, OPERATIONAL MATHEMAT, pCH2

[4] BACKSCATTERING ANALYSIS OF AUGE-NI OHMIC CONTACTS OF N-GAAS [J].

COHEN, DD ;

KALKUR, TS ;

SUTHERLAND, GJ ;

NASSIBIAN, AG .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3100-3104

[5] 2-LAYER MODEL FOR SOURCE RESISTANCE IN SELECTIVELY DOPED HETEROJUNCTION TRANSISTORS [J].

FEUER, MD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) :7-11

[6] CHARACTERIZATION OF INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

KETTERSON, AA ;

MASSELINK, WT ;

GEDYMIN, JS ;

KLEM, J ;

PENG, CK ;

KOPP, WF ;

MORKOC, H ;

GLEASON, KR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :564-571

[7]

LEE SJ, 1984, DEVICE RES C

[8] MOBILITY MEASUREMENTS WITH A STANDARD CONTACT RESISTANCE PATTERN [J].

LOOK, DC .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) :162-164

[9] CLASSICAL MAGNETORESISTANCE MEASUREMENTS IN ALXGA1-XAS/GAAS MODFET STRUCTURES - DETERMINATION OF MOBILITIES [J].

LOOK, DC ;

NORRIS, GB .

SOLID-STATE ELECTRONICS, 1986, 29 (02) :159-165

[10]

LOOK DC, 1986, GALLIUM ARSENIDE REL, P557

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