BACKSCATTERING ANALYSIS OF AUGE-NI OHMIC CONTACTS OF N-GAAS

被引：10

作者：

COHEN, DD ^{[1
]}

KALKUR, TS ^{[1
]}

SUTHERLAND, GJ ^{[1
]}

NASSIBIAN, AG ^{[1
]}

机构：

[1] UNIV WESTERN AUSTRALIA,DEPT ELECT & ELECTR ENGN,NEDLANDS,WA 6009,AUSTRALIA

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 09期

关键词：

D O I：

10.1063/1.337767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3100 / 3104

页数：5

共 16 条

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[2]

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[3]

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[4] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J].

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[5]

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[6]

ILLIADIS A, 1983, SOLID STATE ELECTRON, V26, P1

[7] DEPENDENCE OF OHMIC CONTACT QUALITY ON AU-GE ALLOY THICKNESS FOR N-TYPE GAAS [J].

KALKUR, TS ;

DELL, J ;

NASSIBIAN, AG .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1984, 57 (05) :729-736

[8] Q-SWITCHED RUBY-LASER ALLOYING OF OHMIC CONTACTS ON GALLIUM-ARSENIDE EPILAYERS [J].

MARGALIT, S ;

FEKETE, D ;

PEPPER, DM ;

LEE, CP ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :346-347

[9] SEM ALLOYED AU-GE-NI OHMIC CONTACTS TO GAAS [J].

NASSIBIAN, AG ;

KALKUR, TS .

APPLICATIONS OF SURFACE SCIENCE, 1985, 22-3 (MAY) :1019-1026

[10]

OTSUBO M, 1977, SOLID STATE ELECTRON, V29, P617

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