TIME AND TEMPERATURE-DEPENDENCE OF DENSITY OF OXIDATION-INDUCED STACKING-FAULTS IN DIAMOND-LAPPED SILICON

被引：5

作者：

ISHIHARA, I

KANEKO, H

MATSUMOTO, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1984年 / 23卷 / 08期

关键词：

D O I：

10.1143/JJAP.23.L620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L620 / L622

页数：3

共 9 条

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HSIEH, CM ;

MAHER, DM .

[3]

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HU, SM .

[5]

JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[6] STACKING FAULTS IN ANNEALED SILICON SURFACES [J].

LAWRENCE, JE .

MURAKA, SP ;

QUINTANA, G .

[8]

RAVI KV, 1974, PHILOS MAG, V30, P1081, DOI 10.1080/14786437408207260

[9] DISLOCATION ETCH FOR (100) PLANES IN SILICON [J].

SECCODARAGONA, F .