DEPOSITION OF SILICON OXYNITRIDE THIN-FILMS BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：79

作者：

TSU, DV ^{[1
]}

LUCOVSKY, G ^{[1
]}

MANTINI, MJ ^{[1
]}

CHAO, SS ^{[1
]}

机构：

[1] ENERGY CONVERS DEVICES INC,TROY,MI 48084

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574902

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1998 / 2002

页数：5

共 7 条

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[2] AUGER-ELECTRON SPECTROSCOPY STUDIES OF SILICON-NITRIDE, OXIDE, AND OXYNITRIDE THIN-FILMS - MINIMIZATION OF SURFACE DAMAGE BY ARGON AND ELECTRON-BEAMS [J].

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[3] DEPOSITION OF SILICON DIOXIDE AND SILICON-NITRIDE BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

LUCOVSKY, G ;

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TSU, DV ;

LIN, SY ;

MARKUNAS, RJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :681-688

[4]

RAYMAKER DE, 1978, PHYSICS SIO2 ITS INT, P99

[5] THE ROLE OF HYDROGEN IN SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS [J].

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[6] An Attempt at the AES Evaluation of the Composition of Off-Stoichiometric Silicon Nitride [J].

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[7] LOCAL ATOMIC-STRUCTURE IN THIN-FILMS OF SILICON-NITRIDE AND SILICON DIIMIDE PRODUCED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION [J].

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MANTINI, MJ .

PHYSICAL REVIEW B, 1986, 33 (10) :7069-7076

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