MILLISECOND ANNEALING FOR COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR SOURCE AND DRAIN IMPLANTS

被引：4

作者：

CARTER, JC ^{[1
]}

EVANS, AGR ^{[1
]}

TIMANS, PJ ^{[1
]}

ENGLAND, JMC ^{[1
]}

机构：

[1] MICROELECTR RES CTR,CAMBRIDGE CB3 OHE,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 04期

关键词：

D O I：

10.1116/1.585385

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Millisecond annealing using a dual electron beam annealer has been performed on 4 in. wafers for the activation of arsenic and boron difluoride source and drain implants as part of a complementary metal-oxide semiconductor process. Gross wafer distortion has been avoided by the use of a high background temperature and a synthesized line scan. Measurements of electrical activation of the implanted dopant indicates no metastable highly active phases, but activation to electrical solubility limits of longer lamp anneals performed at the same temperature. Measurements on transistors fabricated using single scan millisecond annealing show annealing cycle induced interface damage no worse than that seen in isothermal lamp anneals.

引用

页码：1944 / 1949

页数：6

共 28 条

[1] HIGH-TEMPERATURE MILLISECOND ANNEALING OF ARSENIC IMPLANTED SILICON [J].