SILICIDE SILICON INTERFACE BONDING

被引：2

作者：

RUBLOFF, GW

机构：

来源：

ULTRAMICROSCOPY | 1984年 / 14卷 / 1-2期

关键词：

D O I：

10.1016/0304-3991(84)90114-1

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：107 / 119

页数：13

共 53 条

[31]

PURTELL RJ, COMMUNICATION

[32] SI(111)-PT INTERFACE AT ROOM-TEMPERATURE - A SYNCHROTRON RADIATION PHOTOEMISSION-STUDY [J].

ROSSI, G ;

ABBATI, I ;

BRAICOVICH, L ;

LINDAU, I ;

SPICER, WE .

PHYSICAL REVIEW B, 1982, 25 (06) :3627-3636

[33] MICROSCOPIC PROPERTIES AND BEHAVIOR OF METAL-SEMICONDUCTOR INTERFACES [J].

RUBLOFF, GW .

FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1983, 23 :179-206

[34] INTERFACE STATES AT THE PT SILICIDE-SI INTERFACE [J].

RUBLOFF, GW .

PHYSICAL REVIEW B, 1982, 25 (06) :4307-4309

[35] CHEMICAL BONDING AND REACTIONS AT THE PD-SI INTERFACE [J].

RUBLOFF, GW ;

HO, PS ;

FREEOUF, JF ;

LEWIS, JE .

PHYSICAL REVIEW B, 1981, 23 (08) :4183-4196

[36] MICROSCOPIC PROPERTIES AND BEHAVIOR OF SILICIDE INTERFACES [J].

RUBLOFF, GW .

SURFACE SCIENCE, 1983, 132 (1-3) :268-314

[37]

RUBLOFF GW, 1980, 8TH P INT VAC C CANN, V1, P562

[38]

SANKEY OF, SOLID STATE COMMUN

[39] THEORETICAL-MODELS OF SCHOTTKY BARRIERS [J].

SCHLUTER, M .

THIN SOLID FILMS, 1982, 93 (1-2) :3-19

[40] ELECTRONIC STATES AND ATOMIC-STRUCTURE AT THE PD2SI-SI INTERFACE [J].

SCHMID, PE ;

HO, PS ;

FOLL, H ;

RUBLOFF, GW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :937-943

← 1 2 3 4 5 6 →