SILICIDE SILICON INTERFACE BONDING

被引：2

作者：

RUBLOFF, GW

机构：

来源：

ULTRAMICROSCOPY | 1984年 / 14卷 / 1-2期

关键词：

D O I：

10.1016/0304-3991(84)90114-1

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：107 / 119

页数：13

共 53 条

[21] CHEMICAL BONDING AND SCHOTTKY-BARRIER FORMATION AT TRANSITION-METAL SILICON INTERFACES [J].

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (02) :745-756

[22] ANALYSIS OF HIGH-RESOLUTION ELECTRON-MICROSCOPE IMAGES OF THE PD2SI-SI INTERFACE [J].

KRAKOW, W .

THIN SOLID FILMS, 1982, 93 (1-2) :109-125

[23] CHEMICAL-REACTION AND SILICIDE FORMATION AT THE PT/SI INTERFACE [J].

MATZ, R ;

PURTELL, RJ ;

YOKOTA, Y ;

RUBLOFF, GW ;

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1984, 2 (02) :253-258

[24]

MATZ R, COMMUNICATION

[25] INTERFERENCE-ENHANCED RAMAN-SCATTERING OF VERY THIN TITANIUM AND TITANIUM-OXIDE FILMS [J].

NEMANICH, RJ ;

TSAI, CC ;

CONNELL, GAN .

PHYSICAL REVIEW LETTERS, 1980, 44 (04) :273-276

[26]

NEMANICH RJ, 1983, MRS P

[27] INTERFACIAL REACTION AND SCHOTTKY-BARRIER IN METAL-SILICON SYSTEMS [J].

OTTAVIANI, G ;

TU, KN ;

MAYER, JW .

PHYSICAL REVIEW LETTERS, 1980, 44 (04) :284-287

[28] SCHOTTKY-BARRIER FORMATION AT PD/SI(111) AND V/SI(111) INTERFACES [J].

PURTELL, R ;

CLABES, JG ;

RUBLOFF, GW ;

HO, PS ;

REIHL, B ;

HIMPSEL, FJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :615-616

[29] SCHOTTKY-BARRIER FORMATION AT PD, PT, AND NI/SI(111) INTERFACES [J].

PURTELL, R ;

HOLLINGER, G ;

RUBLOFF, GW ;

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :566-569

[30] FORMATION OF THE SCHOTTKY-BARRIER AT THE PD/SI INTERFACE [J].

PURTELL, RJ ;

HO, PS ;

RUBLOFF, GW ;

SCHMID, PE .

PHYSICA B & C, 1983, 117 (MAR) :834-836

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