PROPERTIES OF VERY THIN THERMALLY NITRIDED-SIO2/SI INTERFACE BASED ON CONDUCTANCE AND HOT-ELECTRON INJECTION TECHNIQUES

被引：9

作者：

LIU, ZHH

CHENG, YC

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1629 / 1633

页数：5

共 17 条

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