IONIC CLUSTERING AS A POSSIBLE SOURCE OF ERROR IN DETERMINING MOS C-V CHARACTERISTICS

被引：1

作者：

GALLOWAY, KF ^{[1
]}

机构：

[1] USN,AMMUNITION DEPOT,FLSD,STRATEGIC SYST & COMPONENTS DIV,SCI ANAL BRANCH,CRANE,IN 47522

来源：

THIN SOLID FILMS | 1974年 / 23卷 / 01期

关键词：

D O I：

10.1016/0040-6090(74)90233-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：S41 / S44

页数：4

共 16 条

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[8] MOS SURFACE POTENTIAL AND GROSS NONUNIFORMITY [J].

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STRAIN, RJ .

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[9] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

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[10]

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