ON THE BAND OFFSETS OF ALGAAS/GAAS AND BEYOND

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] [Anonymous], 1978, HETEROSTRUCTURE LASE

[3] DETERMINATION OF THE VALENCE-BAND DISCONTINUITY BETWEEN GAAS AND (AL,GA)AS BY THE USE OF P+-GAAS-(AL,GA)AS-P--GAAS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1237 - 1239

[4] RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 335 - 343

[5] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J]. PHYSICAL REVIEW B, 1981, 24 (10): : 5693 - 5697

[6] ENERGY BAND-GAP DISCONTINUITIES IN GAAS-(AL,GA)AS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 484 - 487

[7] CHARGE-LOCATING TECHNIQUES FOR THE STUDY OF TRAPPING PHENOMENA IN GAAS-(AL, GA)AS HETEROSTRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 653 - 654

[8] ON THE ADJUSTABILITY OF THE ABRUPT HETEROJUNCTION BAND-GAP DISCONTINUITY [J]. SURFACE SCIENCE, 1983, 132 (1-3) : 479 - 504

[9] LATTICE-MATCHED HETEROSTRUCTURES AS SCHOTTKY BARRIERS - HGSE-CDSE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1130 - 1133

[10] SCHOTTKY-BARRIER HEIGHT OF AU ON N-GA1-XALXAS AS A FUNCTION OF ALAS CONTENT [J]. APPLIED PHYSICS LETTERS, 1979, 34 (08) : 522 - 527

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] [Anonymous], 1978, HETEROSTRUCTURE LASE

[3] DETERMINATION OF THE VALENCE-BAND DISCONTINUITY BETWEEN GAAS AND (AL,GA)AS BY THE USE OF P+-GAAS-(AL,GA)AS-P--GAAS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1237 - 1239

[4] RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 335 - 343

[5] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J]. PHYSICAL REVIEW B, 1981, 24 (10): : 5693 - 5697

[6] ENERGY BAND-GAP DISCONTINUITIES IN GAAS-(AL,GA)AS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 484 - 487

[7] CHARGE-LOCATING TECHNIQUES FOR THE STUDY OF TRAPPING PHENOMENA IN GAAS-(AL, GA)AS HETEROSTRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 653 - 654

[8] ON THE ADJUSTABILITY OF THE ABRUPT HETEROJUNCTION BAND-GAP DISCONTINUITY [J]. SURFACE SCIENCE, 1983, 132 (1-3) : 479 - 504

[9] LATTICE-MATCHED HETEROSTRUCTURES AS SCHOTTKY BARRIERS - HGSE-CDSE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1130 - 1133

[10] SCHOTTKY-BARRIER HEIGHT OF AU ON N-GA1-XALXAS AS A FUNCTION OF ALAS CONTENT [J]. APPLIED PHYSICS LETTERS, 1979, 34 (08) : 522 - 527