CIRCUIT APPLICATIONS OF THE NEGATIVE DIFFERENTIAL RESISTANCES IN HETEROJUNCTION GAAS MISFETS

被引：9

作者：

DELHAYE, E

AGUILA, T

WOLNY, M

BOISSENOT, P

机构：

[1] L.E.P. -Laboratoires d'Electronique Philips, Limeil-brevannes cedex, 94451, 3, avenue Descartes

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 02期

关键词：

Digital circuits; FET's; MISFET's; Negative resistance; Semiconductor devices and materials;

D O I：

10.1143/JJAP.29.236

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Circuit applications of the negative differential resistance existing in the I-V characteristics of WN gate GaAlAs-GaAs MISFET's are presented for the first time. Both negative drain conductance and negative transconductance are used to implement a bistable flip-flop, frequency multiplication circuit and exclusive NOR gate, thus offering an interesting alternative to resonant tunnelling devices with the advantage of a much simpler epitaxial structure. © 1990 The Japan Society of Applied Physics.

引用

页码：236 / 239

页数：4

共 7 条

[1] QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE [J].