RAPID CAPLESS ANNEALING OF SI-28, ZN-64, AND BE-9 IMPLANTS IN GAAS

被引：14

作者：

LIU, SG

NARAYAN, SY

机构：

来源：

关键词：

D O I：

10.1007/BF02655306

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：897 / 911

页数：15

共 9 条

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[4] CAPLESS ANNEAL OF ION-IMPLANTED GAAS IN CONTROLLED ARSENIC VAPOR
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[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 541 - 543
[5] INFRARED RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 755 - 758
[6] LIU SG, 1980, RCA REV, V41, P227
[7] LIU SG, 1978, AIP C P, V50, P603
[8] ANNEALING OF ION-IMPLANTED GAAS IN A CONTROLLED ATMOSPHERE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (09) : 1413 - 1415
[9] THIN-FILM ENCAPSULANTS FOR ANNEALING GAAS AND INP
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[J]. THIN SOLID FILMS, 1983, 103 (1-2) : 17 - 26