REFLECTANCE ANISOTROPY AS A SURFACE SCIENCE PROBE OF THE GROWTH OF INAS ON (001) GAAS BY MOLECULAR-BEAM EPITAXY

被引：6

作者：

ARMSTRONG, SR

PEMBLE, ME

TAYLOR, AG

FAWCETTE, PN

NEAVE, JH

JOYCE, BA

ZHANG, J

机构：

[1] UMIST,DEPT CHEM,POB 88,MANCHESTER M60 1QD,ENGLAND

[2] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,IRC SEMICOND,LONDON SW7 2AY,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.109986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reflectance anisotropy (RA) measurements for the initial stages of the growth of InAs on GaAs (001) by molecular beam epitaxy (MBE) are presented. It is demonstrated that the RA technique is capable of providing information regarding changes of surface In concentration on the 0. 1 monolayer level in real time, at high temperatures (approximately 600-degrees-C), under real InAs MBE conditions. In addition, associated with the detection of subtle coverage variations, surface reconstruction changes detectable by electron diffraction are also readily detectable by the RA technique.

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页码：503 / 505

页数：3

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