DEPENDENCE OF SI-SIO2 INTERFACE STATE DENSITY ON OXIDE THICKNESS IN STRUCTURES WITH ULTRATHIN (79-227-A) OXIDES

被引：9

作者：

KAR, S ^{[1
]}

SHANKER, D ^{[1
]}

CHARI, KS ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,ADV CTR MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 11期

关键词：

D O I：

10.1063/1.96328

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1203 / 1205

页数：3

相关论文

共 10 条

[1] THEORY OF THE OXIDATION OF METALS
CABRERA, N
MOTT, NF
[J]. REPORTS ON PROGRESS IN PHYSICS, 1948, 12 : 163 - 184
[2] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
GROVE, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &
[3] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
SKLAR, M
GROVE, AS
SNOW, EH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +
[4] JOHNSON NM, 1980, P INT TOPICAL C PHYS, P331
[5] DETERMINATION OF SEMICONDUCTOR QUASI-FERMI LEVEL SEPARATION UNDER ILLUMINATION
KAR, S
VARMA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1988 - 1990
[6] DETERMINATION OF SILICON-SILICON DIOXIDE INTERFACE STATE PROPERTIES FROM ADMITTANCE MEASUREMENTS UNDER ILLUMINATION
KAR, S
VARMA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4256 - 4266
[7] INTERFACE INVESTIGATION USING TRANSPARENT CONDUCTOR-OXIDE-SILICON STRUCTURES
KAR, S
VARMA, S
SARASWAT, P
ASHOK, S
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 7039 - 7043
[8] NARASIMHAN RL, UNPUB
[9] ELECTRONIC TRAPS AND PB CENTERS AT THE SI/SIO2 INTERFACE - BAND-GAP ENERGY-DISTRIBUTION
POINDEXTER, EH
GERARDI, GJ
RUECKEL, ME
CAPLAN, PJ
JOHNSON, NM
BIEGELSEN, DK
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2844 - 2849
[10] THEORY OF CONTINUOUSLY DISTRIBUTED TRAP STATES AT SI-SIO2 INTERFACES
SAKURAI, T
SUGANO, T
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2889 - 2896