LOW-ENERGY ELECTRON LOSS SPECTROSCOPIC STUDY OF PD-SI(111) SYSTEM

被引:14
作者
OKUNO, K
ITO, T
IWAMI, M
HIRAKI, A
机构
关键词
D O I
10.1016/0038-1098(82)90432-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:209 / 212
页数:4
相关论文
共 10 条
[1]   ELS AND LEED STUDY OF CO ADSORPTION ON PD(001) AND PD(001) 6-DEGREES [110] [J].
BADER, SD ;
BLAKELY, JM ;
BRODSKY, MB ;
FRIDDLE, RJ ;
PANOSH, RL .
SURFACE SCIENCE, 1978, 74 (02) :405-422
[2]   MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J].
FREEOUF, JL ;
RUBLOFF, GW ;
HO, PS ;
KUAN, TS .
PHYSICAL REVIEW LETTERS, 1979, 43 (24) :1836-1839
[3]   ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J].
HIRAKI, A ;
SHUTO, K ;
KIM, S ;
KAMMURA, W ;
IWAMI, M .
APPLIED PHYSICS LETTERS, 1977, 31 (09) :611-612
[4]   A NEW APPLICATION OF ELECTRON-ENERGY LOSS SPECTROSCOPY TECHNIQUE FOR A NONDESTRUCTIVE STUDY OF THE SI-SIO2 INTERFACE [J].
ITO, T ;
IWAMI, M ;
HIRAKI, A .
SOLID STATE COMMUNICATIONS, 1980, 36 (08) :695-699
[5]   PRESENCE OF CRITICAL AU-FILM THICKNESS FOR ROOM-TEMPERATURE INTERFACIAL REACTION BETWEEN AU(FILM) AND SI(CRYSTAL SUBSTRATE) [J].
OKUNO, K ;
ITO, T ;
IWAMI, M ;
HIRAKI, A .
SOLID STATE COMMUNICATIONS, 1980, 34 (06) :493-497
[6]   PARTIAL DENSITIES OF STATES IN AMORPHOUS PD0.81SI0.19 [J].
RILEY, JD ;
LEY, L ;
AZOULAY, J ;
TERAKURA, K .
PHYSICAL REVIEW B, 1979, 20 (02) :776-783
[7]   ELECTRON-ENERGY LOSS SPECTROSCOPY OF SI(111)-SIMPLE-METAL INTERFACE [J].
ROWE, JE ;
MARGARITONDO, G ;
CHRISTMAN, SB .
PHYSICAL REVIEW B, 1977, 15 (04) :2195-2201
[8]   ELECTRONIC STATES AND ATOMIC-STRUCTURE AT THE PD2SI-SI INTERFACE [J].
SCHMID, PE ;
HO, PS ;
FOLL, H ;
RUBLOFF, GW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :937-943
[9]  
TROMP R, THIN SOLID FILMS
[10]  
TROMP RM, UNPUB SURF SCI