EFFECTS OF RAPID THERMAL ANNEALING ON LASING PROPERTIES OF INGAAS/GAAS/GAINP QUANTUM-WELL LASERS

被引：25

作者：

ZHANG, G

NAPPI, J

OVTCHINNIKOV, A

ASONEN, H

PESSA, M

机构：

[1] Department of Physics, Tampere University of Technology, SF-33101 Tampere

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 08期

关键词：

D O I：

10.1063/1.352275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal processing of strained-layer InGaAs/GaAs/GaInP separated confinement heterostructure single quantum well lasers, grown by ps-source molecular beam epitaxy, is investigated. Rapid thermal annealing (RTA) significantly increases room-temperature photoluminescence from the quantum well and decreases the threshold current density of the lasers, due to a removal of nonradiative centers from the InGaAs/GaAs interfaces. On the other hand, RTA reduces the characteristic temperature and external differential quantum efficiency of the lasers, due to interdiffusion of Ga and In atoms at high temperatures.

引用

收藏

页码：3788 / 3791

页数：4

相关论文

共 22 条

[1]

Agrawal G., 1986, LONG WAVELENGTH SEMI

[2] IMPROVING THE PERFORMANCE OF STRAINED INGAAS/ALGAAS SINGLE QUANTUM WELL LASERS [J].

BOUR, DP ;

MARTINELLI, RU ;

HAWRYLO, FZ ;

EVANS, GA ;

CARLSON, NW ;

GILBERT, DB .

APPLIED PHYSICS LETTERS, 1990, 56 (04) :318-320

[3] OPERATING CHARACTERISTICS OF INGAAS/AIGAAS STRAINED SINGLE QUANTUM WELL LASERS [J].

BOUR, DP ;

MARTINELLI, RU ;

GILBERT, DB ;

ELBAUM, L ;

HARVEY, MG .

APPLIED PHYSICS LETTERS, 1989, 55 (15) :1501-1503

[4] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J].

CHOI, C ;

OTSUKA, N ;

MUNNS, G ;

HOUDRE, R ;

MORKOC, H ;

ZHANG, SL ;

LEVI, D ;

KLEIN, MV .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :992-994

[5] CONTINUOUS-WAVE PHOTOLUMINESCENCE EXCITATION-SPECTRA OF MULTIPLE NARROW-STEPPED QUANTUM-WELLS - EVIDENCE FOR SATURATION OF INTERFACE TRAPS [J].

DING, YJ ;

GUO, CL ;

LI, S ;

KHURGIN, JB ;

LAW, KK ;

MERZ, JL .

APPLIED PHYSICS LETTERS, 1992, 60 (02) :154-156

[6] OPTICAL-PROPERTIES OF A SINGLE STRAINED INGAAS/GAAS QUANTUM-WELL GROWN ON VICINAL GAAS-SURFACES [J].

DROOPAD, R ;

PUECHNER, RA ;

SHIRALAGI, KT ;

CHOI, KY ;

MARACAS, GN .

APPLIED PHYSICS LETTERS, 1991, 58 (16) :1777-1779

[7] DEGRADATION OF ACTIVE REGION IN INGAASP/INP BURIED HETEROSTRUCTURE LASERS [J].

FUKUDA, M ;

IWANE, G .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) :2932-2936

[8] THERMAL-PROCESSING OF STRAINED GAINAS/GAAS HIGH HOLE MOBILITY TRANSISTOR STRUCTURES [J].

GILLIN, W ;

TANG, YS ;

WHITEHEAD, NJ ;

HOMEWOOD, KP ;

SEALY, BJ ;

EMENY, MT ;

WHITEHOUSE, CR .

APPLIED PHYSICS LETTERS, 1990, 56 (12) :1116-1118

[9] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J].

GOURLEY, PL ;

FRITZ, IJ ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :377-379

[10] OPTICAL-PROPERTIES AND STOKES SHIFTS IN LAMP-ANNEALED INGAAS GAAS STRAINED LAYER SUPERLATTICE [J].

KOTHIYAL, GP ;

BHATTACHARYA, P .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) :2760-2764