GROWTH CONDITION STUDIES OF PSEUDOMORPHIC INGAAS/GAAS STRAINED LAYER STRUCTURES AND INGAAS/ALGAAS HIGH ELECTRON-MOBILITY TRANSISTOR LAYER PROPERTIES

被引：13

作者：

WENG, SL

WEBB, C

ECKSTEIN, JN

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584751

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：361 / 364

页数：4

共 14 条

[1] OPTICAL CHARACTERIZATION OF PSEUDOMORPHIC INXGA1-XAS-GAAS SINGLE-QUANTUM-WELL HETEROSTRUCTURES [J].

ANDERSON, NG ;

LAIDIG, WD ;

KOLBAS, RM ;

LO, YC .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2361-2367

[2] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ANDERSSON, TG ;

CHEN, ZG ;

KULAKOVSKII, VD ;

UDDIN, A ;

VALLIN, JT .

APPLIED PHYSICS LETTERS, 1987, 51 (10) :752-754

[3] ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME [J].

BERGER, PR ;

CHANG, K ;

BHATTACHARYA, P ;

SINGH, J ;

BAJAJ, KK .

APPLIED PHYSICS LETTERS, 1988, 53 (08) :684-686

[4] P-CHANNEL, STRAINED QUANTUM-WELL, FIELD-EFFECT TRANSISTOR [J].

DRUMMOND, TJ ;

ZIPPERIAN, TE ;

FRITZ, IJ ;

SCHIRBER, JE ;

PLUT, TA .

APPLIED PHYSICS LETTERS, 1986, 49 (08) :461-463

[5] GROWTH AND CHARACTERIZATION OF ALGAAS/INGAAS/GAAS PSEUDOMORPHIC STRUCTURES [J].

FISCHERCOLBRIE, A ;

MILLER, JN ;

LADERMAN, SS ;

ROSNER, SJ ;

HULL, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :620-624

[6] CRITICAL LAYER THICKNESS IN IN0.2GA0.8AS/GAAS SINGLE STRAINED QUANTUM-WELL STRUCTURES [J].

FRITZ, IJ ;

GOURLEY, PL ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1987, 51 (13) :1004-1006

[7] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

FRITZ, IJ ;

PICRAUX, ST ;

DAWSON, LR ;

DRUMMOND, TJ ;

LAIDIG, WD ;

ANDERSON, NG .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :967-969

[8] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J].

GOURLEY, PL ;

FRITZ, IJ ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :377-379

[9] GROWTH AND RAPID THERMAL ANNEALING OF ALGAAS/INGAAS PSEUDOMORPHIC MODULATION-DOPED STRUCTURES [J].

KESAN, VP ;

DODABALAPUR, A ;

NEIKIRK, DP ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1988, 53 (08) :681-683

[10] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

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