COMPOSITION CONTROL OF GAASP GROWN BY MOLECULAR-BEAM EPITAXY

被引：20

作者：

NOMURA, T

OGASAWARA, H

MIYAO, M

HAGINO, M

机构：

[1] Research Institute of Electronics, Shizuoka University, Hamamatsu, 432

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90947-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper describes composition control of GaAsP alloy grown by molecular beam epitaxy. The relationship between the growth condition and the film composition is explained applying a precursor state growth model to GaAsP growth. The activation energies and the parameters appearing in the relationship are determined by fitting the calculated compositions to the experimental ones. The effect of flux intensities, substrate temperature and growth rate on the composition is discussed.

引用

页码：61 / 64

页数：4

共 7 条

[1] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J].