MICROHARDNESS AND INTERNAL-STRESS OF SI3N4-SIC FILMS PREPARED BY PLASMA CVD

被引：15

作者：

KAMATA, K ^{[1
]}

AIZAWA, N ^{[1
]}

MORIYAMA, M ^{[1
]}

机构：

[1] NAGANO COLL TECHNOL,NAGANO 380,JAPAN

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1986年 / 5卷 / 10期

关键词：

D O I：

10.1007/BF01730281

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1055 / 1057

页数：3

共 10 条

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[5] HYBRIDIZATION BETWEEN SI3N4 AND SIC FILMS BY PLASMA CVD [J].

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[7] CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE .4. HARDNESS CHARACTERISTICS [J].

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[8]

NIIHARA K, 1984, J AM CERAM B, V63, P1160

[9] The tension of metallic films deposited by electrolysis [J].

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[10]

1983, THIN FILM HDB, P335

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