HYBRIDIZATION BETWEEN SI3N4 AND SIC FILMS BY PLASMA CVD

被引：26

作者：

KAMATA, K ^{[1
]}

MAEDA, Y ^{[1
]}

MORIYAMA, M ^{[1
]}

机构：

[1] NAGANO COLL TECHNOL,NAGANO 380,JAPAN

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1986年 / 5卷 / 10期

关键词：

CERAMIC MATERIALS - Synthesis - PLASMAS - Applications - SILICON CARBIDE - SILICON COMPOUNDS - Chemical Reactions - SILICON NITRIDE;

D O I：

10.1007/BF01730280

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have recently achieved hybridization between Si//3N//4 and SiC films, i. e. preparing homogeneous (in atomic scale) films, by plasma chemical vapor deposition (CVD) using SiH//4, NH//3 and CH//4 (or C//2H//4) gases. This novel material shows interesting characteristics with respect to optical, mechanical and electrical properties. Preparation of the films was performed by the charge-coupled plasma CVD apparatus.

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页码：1051 / 1054

页数：4

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