DC ELECTRICAL-CONDUCTIVITY OF AMORPHOUS SI3N4-C COMPOSITES PREPARED BY CHEMICAL VAPOR-DEPOSITION

被引：7

作者：

GOTO, T

HIRAI, T

机构：

来源：

JOURNAL OF MATERIALS SCIENCE | 1983年 / 18卷 / 02期

关键词：

D O I：

10.1007/BF00560626

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：383 / 390

页数：8

共 17 条

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[9] DENSITY AND DEPOSITION RATES OF AMORPHOUS CVD-SI3N4 INCLUDING CARBON [J].

HIRAI, T ;

GOTO, T .

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[10] PREPARATION OF AMORPHOUS SI3N4-C PLATE BY CHEMICAL VAPOR-DEPOSITION [J].

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GOTO, T .

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