ETCHING OF CHEMICALLY VAPOUR-DEPOSITED AMORPHOUS SI3N4-C COMPOSITES IN HF SOLUTION

被引：9

作者：

GOTO, T

HIRAI, T

机构：

来源：

JOURNAL OF MATERIALS SCIENCE | 1983年 / 18卷 / 11期

关键词：

D O I：

10.1007/BF00544164

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3387 / 3392

页数：6

共 17 条

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