CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE STUDY OF RESIDUAL DEFECTS IN BF2+-IMPLANTED (001)SI

被引:36
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NIEH, CW
CHEN, LJ
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10.1063/1.337722
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O59 [应用物理学];
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页码:3114 / 3119
页数:6
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共 27 条
[11]  
GHANDHI SK, 1983, VLSI FABRICATION PRI, P69
[12]   JUNCTION LEAKAGE STUDIES IN RAPID THERMAL ANNEALED DIODES [J].
KAMGAR, A ;
FICHTNER, W ;
SHENG, TT ;
JACOBSON, DC .
APPLIED PHYSICS LETTERS, 1984, 45 (07) :754-756
[13]  
MACLVER BA, 1977, J ELECTROCHEM SOC, V124, P273
[14]  
MARCUS RB, 1983, TRANSMISSION ELECTRO
[15]   FORMATION OF BUBBLES IN BF2+-IMPLANTED SILICON [J].
NIEH, CW ;
CHEN, LJ .
APPLIED PHYSICS LETTERS, 1986, 48 (22) :1528-1530
[16]   SILICON-GATE N-WELL CMOS PROCESS BY FULL ION-IMPLANTATION TECHNOLOGY [J].
OHZONE, T ;
SHIMURA, H ;
TSUJI, K ;
HIRAO, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) :1789-1795
[17]  
Olander D., 1976, FUNDAMENTAL ASPECTS
[18]  
PRUSSIN S, 1975, ION IMPLANTATION SEM, P449
[19]  
Ryding G., 1975, IEEE Transactions on Manufacturing Technology, VMFT-4, P21, DOI 10.1109/TMFT.1975.1135858
[20]   NEAR-SURFACE DEFECTS FORMED DURING RAPID THERMAL ANNEALING OF PREAMORPHIZED AND BF2+-IMPLANTED SILICON [J].
SANDS, T ;
WASHBURN, J ;
GRONSKY, R ;
MASZARA, W ;
SADANA, DK ;
ROZGONYI, GA .
APPLIED PHYSICS LETTERS, 1984, 45 (09) :982-984