CHEMICALLY MODIFIED GAAS SCHOTTKY-BARRIER VARIATION

被引：17

作者：

SCHMIDT, MT

MA, QY

PODLESNIK, DV

OSGOOD, RM

YANG, ES

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584590

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：980 / 985

页数：6

共 36 条

[1] REDUCTION OF SURFACE-STATES ON GAAS BY THE PLASMA GROWTH OF OXYFLUORIDES [J].

AHRENKIEL, RK ;

KAZMERSKI, LL ;

IRELAND, PJ ;

JAMJOUM, O ;

RUSSELL, PE ;

DUNLAVY, D ;

WAGNER, RS ;

PATTILLO, S ;

JERVIS, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :434-437

[2] THE DENSITY OF STATES AT GAAS/NATIVE OXIDE INTERFACES [J].

AHRENKIEL, RK ;

DUNLAVY, DJ .

SOLID-STATE ELECTRONICS, 1984, 27 (05) :485-489

[3] RECONSTRUCTION AND OXIDATION OF THE GAAS(110) SURFACE [J].

BARTON, JJ ;

GODDARD, WA ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1178-1185

[4] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[5] DIRECT CURRENTS THROUGH INTERFACE STATES IN METAL-SEMICONDUCTOR CONTACTS [J].

CARD, HC .

SOLID-STATE ELECTRONICS, 1975, 18 (10) :881-883

[6] EFFECTS OF ULTRATHIN OXIDES IN CONDUCTING MIS STRUCTURES ON GAAS [J].

CHILDS, RB ;

RUTHS, JM ;

SULLIVAN, TE ;

FONASH, SJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1397-1401

[7]

Dean J.A., 1979, LANGES HDB CHEM

[8] A MICROSCOPIC MODEL OF METAL-SEMICONDUCTOR CONTACTS [J].

DUKE, CB ;

MAILHIOT, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1170-1177

[9] ACCURATE PHASE CAPACITANCE SPECTROSCOPY OF TRANSITION-METAL SILICON DIODES [J].

EVANS, HL ;

WU, X ;

YANG, ES ;

HO, PS .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :486-488

[10]

EVANS HL, UNPUB J APPL PHYS

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