THE DENSITY OF STATES AT GAAS/NATIVE OXIDE INTERFACES

被引:10
作者
AHRENKIEL, RK
DUNLAVY, DJ
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D O I
10.1016/0038-1101(84)90157-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:485 / 489
页数:5
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