共 13 条
[2]
FORMATION OF SEMICONDUCTOR EPITAXIAL-FILMS BY PULSE HEATING CRYSTALLIZATION OR REGROWTH
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1983, 76 (01)
:179-190
[4]
THE POLYCENTER CRYSTALLIZATION OF AMORPHOUS-SILICON LAYERS AT PULSE ANNEALING
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1982, 73 (02)
:587-592
[5]
TIME-RESOLVED TEM OF PULSED CRYSTALLIZATION OF AMORPHOUS SI AND GE FILMS
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1982, 70 (02)
:473-481
[6]
DHVURECHENSKII AV, 1982, PULSE ANNEALING SEMI
[7]
EXPLOSIVE LIQUID-PHASE CRYSTALLIZATION OF ION-IMPLANTED SILICON
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1982, 73 (02)
:K161-&
[8]
Gilmer G. H., 1980, LASER ELECTRON BEAM, P227
[9]
GOLD RB, 1980, LASER ELECTRON BEAM, P221
[10]
CRYSTALLIZATION OF AMORPHOUS SILICON FILMS
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1978, 48 (02)
:313-321