THE EFFECT OF GAS TEMPERATURE ON THE GROWTH OF INP BY ATMOSPHERIC PRESSURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION USING TRIMETHYL INDIUM AND PH3 SOURCES

被引：8

作者：

ZILKO, JL

VANHAREN, DL

LU, PY

SCHUMAKER, NE

LEUNG, SY

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1985年 / 14卷 / 05期

关键词：

D O I：

10.1007/BF02654025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：563 / 572

页数：10

共 13 条

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[7] THERMAL-DECOMPOSITION OF METALORGANIC COMPOUNDS USED IN THE MOCVD OF INP [J].

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[9]

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[10] INP MESFET GROWN BY MOCVD [J].

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