CHARACTERIZATION OF THIN OXIDE-FILMS FOR FET APPLICATIONS

被引：4

作者：

OSBURN, CM ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 1975年 / 12卷 / 3-4期

关键词：

D O I：

10.1016/0022-4596(75)90311-4

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

引用

页码：232 / 237

页数：6

共 48 条

[1]

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[3]

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[4] EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J].

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ELDRIDGE, JM .

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[5] AUGER ANALYSIS OF CHLORINE IN HCL-GROWN, OR CL2-GROWN SIO2 FILMS [J].

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OSBURN, CM ;

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[6] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

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SNOW, EH .

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[7] BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION [J].

DISTEFAN.TH .

APPLIED PHYSICS LETTERS, 1971, 19 (08) :280-&

[8] DIELECTRIC BREAKDOWN INDUCED BY SODIUM IN MOS STRUCTURES [J].

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JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :527-528

[9] SODIUM ION DRIFT THROUGH PHOSPHOSILICATE GLASS-SIO2 FILMS [J].

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[10]

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