CHARACTERIZATION OF THIN OXIDE-FILMS FOR FET APPLICATIONS

被引：4

作者：

OSBURN, CM ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 1975年 / 12卷 / 3-4期

关键词：

D O I：

10.1016/0022-4596(75)90311-4

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

引用

页码：232 / 237

页数：6

共 48 条

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[23]

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[27] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J].

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[28] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J].

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[29] ACCELERATED DIELECTRIC BREAKDOWN OF SILICON DIOXIDE FILMS [J].

OSBURN, CM ;

CHOU, NJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) :1377-1384

[30] EFFECT OF MOBILE SODIUM IONS ON FIELD ENHANCEMENT DIELECTRIC BREAKDOWN IN SIO2 FILMS ON SILICON [J].

OSBURN, CM ;

RAIDER, SI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) :1369-1376

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